the suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. a feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. physical vapor deposition (pvd) and pulsed plasma-enhanced chemical vapor deposition (pecvd), naturally, form asymmetric na...

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

The transition metal nitrides like titanium nitride exhibit very interesting color variation properties depending on the different plasma deposition conditions using cylindrical magnetron sputtering method. It is found in this deposition study that nitrogen partial pressure in the reactive gas discharge environment plays a significant role on the color variation of the film coatings on bell-met...

The suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. A feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. Physical vapor deposition (PVD) and pulsed plasma-enhanced chemical vapor deposition (PECVD), naturally, form asymmetric na...